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Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets
  • ISSN号：1386-9477
  • 期刊名称：Physica E: Low-Dimensional Systems and Nanostructu
  • 时间：2012.8.8
  • 页码：61-65
  • 相关项目：高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
作者： Zheng, Y. D.|Chen, P.|Wang, M. Y.|Yu, Z. G.|Liu, B.|Xie, Z. L.|Xiu, X. Q.|Wu, Z. L.|Xu, F.|
同期刊论文项目
高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
期刊论文 79
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