中文摘要：

研究了500℃高温条件下注氢对V-4Cr、V-4Ti和V-4Cr-4Ti三种合金微观结构的影响.在注氢实验之前,V-4Cr合金的基体清晰干净,而V-4Ti和V-4Cr-4Ti两种合金的基体中则出现很多相互平行和垂直的针状析出相,且大部分析出相周围都存在着位错.在500℃注氢实验之后,V-4Cr合金基体中出现大量的分布不均的黑色点状缺陷和缺陷簇,而V-4Ti和V-4Cr-4Ti两种合金的基体中除产生点状缺陷外,还出现高密度的气泡,且V-4Cr-4Ti合金中气泡的平均尺寸要稍小一些.另外,V-4Ti和V-4Cr-4Ti合金基体中原有的析出相在注氢实验之后都发生不同程度的溶解.在观察V-4Cr-4Ti合金基体中气泡分布规律时发现,在距离晶界25 nm的范围内几乎看不到气泡的存在,由此推断晶界的存在可以抑制氢气泡等辐照缺陷的产生.

英文摘要：

The microstructure evolution of V-4Cr,V-4Ti and V-4Cr-4Ti alloys was studied before and after hydrogen implantation at 500 ℃. Before hydrogen implantation the matrix of V- 4Cr alloy is clean,while parallel and vertical needle-like precipitates exist in the matrix of the other two alloys,and there are a lot of dislocations around the precipitates. After hydrogen implantation at500 ℃ a large amount of uneven-distributed black dot defects and defect clusters appear in V- 4Cr alloy. Besides the black dot defects,a lot of bubbles are found in V-4Ti and V-4Cr-4Ti alloys,and the average size of bubbles in V- 4Cr- 4Ti alloy is smaller than that in V-4Ti alloy. In addition,the dissolution phenomena of the precipitates happen in the both alloys. There are very few bubbles found near the grain boundary in the range of 25 nm in V- 4Cr- 4Ti alloy,which probably indicate that the defects,such as bubbles,caused by irradiation can be restrained by the existing of grain boundaries in this material.