采用纳米压痕仪,研究了不同曲率半径的金刚石压头在单晶硅表面的径向纳动运行行为和损伤特征。结果表明,相对于尖端名义曲率半径,压头在一定压入深度下的等效曲率半径是决定材料纳动损伤的更有效参数。在50mN的峰值载荷下,曲率半径20μm的球形压头在单晶硅表面的径向纳动以弹性变形为主,未观察到明显的纳动损伤;尽管Berkovich压头尖端曲率半径仅为150nm,但其在单晶硅表面产生的纳动损伤却比2μm球形压头轻微。分析其原因,Berkovich压头的等效半锥角为70.32°,远大于2μm球形压头的半锥角42.50°。因此,Berkovich压头在高载下具有更大的等效曲率半径,产生更轻微的纳动损伤。研究结果还表明,在纳动循环初期,2μm球形压头和Berkovich压头在硅表面的接触刚度升高较快,单晶硅表面的加工硬化现象明显;而20μm球形压头基本不引起硅的加工硬化。
A nanoindenter is adopted to study the radial nanofretting behaviors of diamond indenters of different curvature radii on the monocrystal silicon surface and the damage characteristic. It is found that compared to the tip nominal curvature radius, the equivalent curvature radius of indenter at a certain identation depth plays a much more important role in the nanofretting damage of material. Under a peak indentation load of 50 mN, no obvious damage is observed on Si100 after 200 nanofretting cycles by 20 μm spherical indenter. Even with a relatively smaller curvature radius, 150 nm Berkovich indenter induces the weaker nanofretting damage than 2 μm spherical indenter on Si100. Analysis indicates that the equivalent half cone angle of Berkovich indenter is 70.32°,which is much larger than that of 2 μm spherical indenter, 42.50°. As the indentation depth is larger than 300 nm, the equivalent curvature radius of Berkovich indenter is larger than that of 2 μm spherical indenter. As a result, the contact area of Berkovich indenter will be larger and nanofretting damage will be weaker. The results also indicate that the contact stiffness of both 2 μm spherical indenter and Berkovich indenter increases sharply in the initial nanofretting cycles, which induces an obvious work-hardening process of material. However, no work-hardening process is found during the nanofretting by 20 μm spherical indenter.