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High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting di
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：0
  • 页码：211104-211106
  • 语言：英文
  • 相关项目：氮化镓基量子异质结构和发光性质
作者： Liu, Ningyang|Yu, Tao|Wang, Lei|Yang, Ziwen|Li, Ding|Chen, Weihua|Liu, Lei|Hu, Xiaodong|Li, Rui|
同期刊论文项目
氮化镓基量子异质结构和发光性质
期刊论文 21 会议论文 9
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