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中文摘要：
提出了一种精确测试电吸收调制激光器（EML）集成芯片高频特性的方法。待测芯片制作在带有微带线的热沉上,同时采用光探测器作为光电转换器,二者构成待测双口网络。被测双口网络的一端是共面线,使用微波探针作为测试夹具加载信号,另一端是同轴线,两个测试端口不同,不能采用简单的同轴校准方法校准待测系统。测试过程中采用扩展的开路-短路-负载（OSL）误差校准技术对集成器件的测试夹具微波探针进行校准,扣除了测试中使用的微波探针对集成光源高频特性的影响,同时采用光外差的方法扣除了高速光探测器的频率响应对结果的影响,得到集成光源散射参数的精确测试结果。
英文摘要：
A method of accurately measuring the high frequency characterization of an electroabsorption modulated integrated distributed feedback （DFB） electroabsorption modulator laser （EML） is presented. The integrated device under test is mounted on the ground electrode of an AlN submount with micro bonding wire, which has coplanar electrodes with a gap of 50 μm to load the microwave signals. A high speed photodetector is used as the photoelectro converter. The two instruments consist of a two-port network. One port of the network under test is a coplanar electrode with a microwave probe to load signals, the other port is a coaxial line, and thus the two test ports are different, so the network can not be calibrated just with the coaxial calibration method. The microwave test fixturesmicrowave probe is calibrated by use of the extended open-short-load （OSL） method, and the effects of microwave probe on high frequency characteristic of integrated laser are subtracted. Meanwhile, the frequency response of the high speed photodetector is also subtracted by the improved optical heterodyne method and the accurate scattering parameters measurement results of the integrated device are obtained.
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