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Fabrication and characteristics of ZnO MOS capacitors with high-K HfO2 gate dielectrics
  • ISSN号：1674-7321
  • 期刊名称：Science China Technological Sciences
  • 时间：0
  • 页码：2333-2336
  • 相关项目：基于氧化锌薄膜晶体管的紫外图像传感器像素研究
作者： Han DeDong|Wang Yi|Zhang ShengDong|Sun Lei|Kang JinFeng|Liu XiaoYan|Du Gang|Liu LiFeng|Han RuQi|
同期刊论文项目
基于氧化锌薄膜晶体管的紫外图像传感器像素研究
期刊论文 13 会议论文 31 专利 17
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