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YIG Thin Film for RF Integrated Inductor
  • ISSN号:1000-2413
  • 期刊名称:《武汉理工大学学报:材料科学英文版》
  • 时间:0
  • 分类:TN432[电子电信—微电子学与固体电子学] O484.43[理学—固体物理;理学—物理]
  • 作者机构:School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
  • 相关基金:Funded by the National Natural Science Foundation of China(No.11174226)
作者: 刘锋, 叶双莉
中文摘要:

大音阶的第五音胶化方法并且快速的热退火(RTA ) 准备的薄电影为综合引导者处理的钇铁石榴石(YIG ) 被调查。X 光检查衍射(XRD ) 结果显示 YIG 电影超过 650 退火了 ?敤牣慥敳琠敨攠潬杮瑡潩 n

英文摘要:

The yttrium iron garnet(YIG) thin films prepared by the sol-gel method and rapid thermal annealing(RTA) process for integrated inductor are investigated. The X-ray diffraction(XRD) results indicate that the YIG film annealed above 650 ℃ is poly-crystalline with single-phase garnet structure. Moreover, it can be found that the initial permeability μi, saturation magnetization MS and coercivity Hc of these YIG films increase with increasing RTA temperature. Low temperature annealing after crystallization can further improve the magnetic properties of YIG film. Thereby, a planar integrated inductor in the presence of Si substrate/SiO2 layer/Y2.8Bi0.2Fe5O12 thin film/Cu spiral coil structure is fabricated successfully by the standard IC processes. Due to the magnetic enhancement originated from YIG film, the inductance L and quality factor Q of the inductor with YIG film are improved in a certain frequency range.

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期刊信息
  • 《武汉理工大学学报:材料科学英文版》
  • 中国科技核心期刊
  • 主管单位:
  • 主办单位:武汉理工大学
  • 主编:
  • 地址:武汉市洪山区珞狮路122号
  • 邮编:430070
  • 邮箱:jwutms@mail.whut.edu.cn
  • 电话:027-87384113 87651870
  • 国际标准刊号:ISSN:1000-2413
  • 国内统一刊号:ISSN:42-1680/TB
  • 邮发代号:38-78
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:149