中文摘要：

Geometric structures, stabilities, and electronic properties of SrSin （n = 1-12） clusters have been investigated using the density-functional theory within the generalized gradient approximation. The optimized geometries indicate that one Si atom capped on SrSin_ 1 structure and Sr atom capped Sin structure for difference SrSin clusters in size are two dominant growth patterns. The calculated average binding energy, fragmentation energy, second-order energy difference, the highest occupied molecular orbital, and the lowest unoccupied molecular orbital （HOMO-LUMO） gaps show that the doping of Sr atom can enhance the chemical activity of the silicon framework. The relative stability of SrSi9 is the strongest among the SrSin clusters. According to the mulliken population and natural population analysis, it is found that the charge in SrSin clusters transfer from Sr atom to the Sin host. In addition, the vertical ionization potential, vertical electron affinity, and chemical hardness are also discussed and compared.