中文摘要：

首次将共面型介质阻挡放电（C—DBD）应用于蒸发聚四氟乙烯（PTFE）并沉积制备了碳氟膜，制备的碳氟膜尺寸为50～100nm，其表面均方根（RMS）粗糙度为15．55nm（测量面积为10μm×10μm）。发射光谱表明，C—DBD产生了能量较高的电子激发态Ar原子（12．9～13．5eV）。该方法装置简单，在常温常压下操作，薄膜沉积速率快，而且环境友好．

英文摘要：

Deposition of CFx films from PTFE evaporation employing coplanar dielectric barrier discharge （C-DBD） was reported＇for the first time. Using this approach,CFx films composed of 50～100 nm particles have been prepared. The statistical root mean square roughness of the CFx films was 15.55 nm for a measured area of 10 μm× 10μm. Based upon the results of optical emission spectra diagnosis,it can be concluded that electronically excited-state Ar atoms possessing 12.9～ 13.5 eV energy are generated abundantly by C-DBD. C-DBD is a fit discharge for evaporating PTFE and depositing CFx films. This approach reported here exhibits many applicative advantages such as being a simple, low-cost and fast deposition,operation under pressure and at room temperature and environmentay benign.