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Growth of Large-Area 2D MoS2(l_,)Se2, Semiconductor
  • ISSN号：0935-9648
  • 期刊名称：Advanced Materials
  • 时间：2014.5
  • 页码：2648-2653
  • 相关项目：利用高分辨电子显微像分析晶体势场与原子列厚度的研究
作者： Jin, Chuanhong|Wang, Chunming|Zhang, Jin|Xie, Liming|
同期刊论文项目
利用高分辨电子显微像分析晶体势场与原子列厚度的研究
期刊论文 21
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