中文摘要：

这份报纸在与局部地做射出二极管的 pn 连接光设计了的硅(Si ) 上考察我们的最近的进步搬运人潜力。有脱臼环的植入的 Si 二极管有的硼 electroluminescence (EL ) 量效率直到 0.12% 。沿着拉紧的脱臼线的硼用吸气剂吸气局部地生产 p 类型尖铁在脱臼做，它为围住空间地间接的激子有潜在的井。界限激子的热分离释放自由搬运人，导致到有增加温度的乐队光的乐队的异常增加。与 0.2% 的外部量效率射出二极管的 Si 光被做数组的 pnpn 调整的实现也表明了。

英文摘要：

This paper reviews our recent progress on silicon （Si） pn junction light emitting diodes with locally doping engineered carrier potentials. Boron implanted Si diodes with dislocation loops have electroluminescence （EL） quantum efficiency up to 0.12%, which is two orders of magnitude higher than those without dislocations. Boron gettering along the strained dislocation lines produces locally p-type spike doping at the dislocations, which have potential wells for bounding spatially indirect excitons. Thermal dissociation of the bound excitons releases free carriers, leading to an anomalous increase of the band to band luminescence with increasing tempera- ture. Si light emitting diodes with external quantum efficiency of 0.2% have been also demonstrated by implementation of pnpn modulation doping arrays.