中文摘要：

拉曼系列和扫描电子显微镜(SEM ) 技术被用来决定微晶质的硅的结构的性质(c-Si : H ) 与高频率在不同底层上扔的电影提高血浆的化学蒸汽免职(VHF-PECVD ) 技术。用拉曼系列，水晶的体积部分 Xc 和平均谷物尺寸 d 的价值是 86% ， 12.3nm；65% ， 5.45nm；并且 38% ， 4.05nm 为单个水晶的硅晶片， corning 7059 玻璃，和一般光玻璃底层分别地。SEM 图象进一步在电影表面粗糙上表明底层效果。为单个水晶的硅晶片和 Corning 7059 玻璃， c-Si 的表面: 因为同质的生长或小格子失配， H 电影是相当光滑的。要不是一般光玻璃， c-Si 的表面: H 电影是很不平的，因此，成长表面粗糙影响结晶化过程并且决定扔的材料的平均谷物尺寸。而且与厚度，相片和黑暗电导率的大小，光敏度和激活精力，免职率上的底层效果， c-Si 的光、电的性质: H 薄电影也被调查了。根据上述结果，底层影响为象水晶一样材料的形成充当一粒种子的起始的成长层，这能被结束，然后免职评估光、电的性质因此，强烈也被影响免职参数优化是能被用来获得好起始的成长层的关键方法，到认识到 c-Si 的免职:有象一般玻璃那样的便宜底层上的设备等级质量的 H 电影。

英文摘要：

Raman spectra and scanning electron microscope （SEM） techniques were used to determine the structural properties of microcrb＇stalline silicon （μc-Si：H） films deposited on different substrates with the very high frequency plasma-enhanced chemical vapor deposition （VHF-PECVD） technique. Using the Raman spectra, the values of crystalline volume fraction Xc and average grain size d are 86%, 12.3nm; 65%, 5.45nm; and 38%, 4.05nm, for single crystalline silicon wafer, coming 7059 glass, and general optical glass substrates, respectively. The SEM images further demonstrate the substrate effect on the film surface roughness. For the single crystalline silicon wafer and Coming 7059 glass, the surfaces of the μc-Si：H films are fairly smooth because of the homogenous growth or h＇ttle lattice mismatch. But for general optical glass, the surface of the μ-Si： H film is very rough, thus the growing surface roughness affects the crystallization process and determines the average grain size of the deposited material. Moreover, with the measurements of thickness, photo and dark conductivity, photosensitivity and activation energy, the substrate effect on the deposition rate, optical and electrical properties of the μc-Si：H thin films have also been investigated. On the basis of the above results, it can be concluded that the substrates affect the initial growing layers acting as a seed for the formation of a crystalline-like material and then the deposition rates, optical and electrical properties are also strongly influenced, hence, deposition parameter optimization is the key method that can be used to obtain a good initial growing layer, to realize the deposition of μc-Si：H films with device-grade quality on cheap substrates such as general glass.