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大自旋极化率半金属Fe3O4薄膜制备及其磁性能
  • ISSN号：0454-5648
  • 期刊名称：《硅酸盐学报》
  • 时间：0
  • 分类：O482[理学—固体物理;理学—物理]
  • 作者机构：[1]电子科技大学,电子薄膜与集成器件重点实验室,成都610054
  • 相关基金：国家自然科学基金（60721001,60771047,60801027）; 四川省应用基础研究（2008JY0056）资助项目
作者： 唐晓莉[1], 荆玉兰[1], 张怀武[1], 苏桦[1]
关键词： 半金属材料, 巨磁电阻, 四氧化三铁薄膜, half-metallic material, giant magnetoresistance, magnetic iron oxide thin film
中文摘要：

采用磁控溅射法先在Si（100）基片上沉积适当厚度的Fe薄膜作为底层,通过对Fe底层厚度及氧气流量的控制,使底层Fe形成化学计量的无缓冲层的Fe3O4多晶薄膜。通过X射线衍射和磁强计分析了样品的结构和磁性能。结果表明：当初始氧气流量为1.5mL/s时,在15nm的Fe薄膜底层上可成功制备高晶粒织构的化学计量的Fe3O4薄膜。将Fe3O4薄膜应用到巨磁电阻（giant magnetoresistance,GMR）多层膜中,由于多层膜材料间电阻率的失配,利用Fe3O4半金属薄膜并不能获得预见的大GMR效应。

英文摘要：

Fe films with different thicknesses as underlayer on Si（100） substrate were deposited by magnetron reactive sputtering,and stoichiometric polycrystalline Fe3O4 films without a buffer layer on the Fe underlayer films were prepared by controlling the thickness of the Fe underlayer and oxygen flow rate.The structural and magnetic properties of the Fe3O4 films were determined by X-ray diffraction and magnetometry.The results reveal that at the oxygen flow rate of 1.5 mL/s,Fe3O4 films with good stoichiometry and high crystallographic quality on the 15 nm Fe underlayer could be grown after vacuum annealing.When the fabricated Fe3O4 film was used in the giant magnetoresistance（GMR） multilayer,the predicted high GMR effect was not achieved due to the mismatch of the resistivity of the multilayer.

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期刊信息
  • 《硅酸盐学报》
  • 中国科技核心期刊
  • 主管单位:中国科学技术协会
  • 主办单位:中国硅酸盐学会
  • 主编：南策文
  • 地址：北京海淀区三里河路11号
  • 邮编：100831
  • 邮箱：jccsoc@sina.com
  • 电话：010-57811253 57811254
  • 国际标准刊号：ISSN：0454-5648
  • 国内统一刊号：ISSN：11-2310/TQ
  • 邮发代号:2-695
  • 获奖情况:
  • EI　Compendex、CA、SA、PI收录期刊,全国核心期刊,中国期刊方阵“双效”期刊
  • 国内外数据库收录:
  • 美国化学文摘（网络版）,荷兰文摘与引文数据库,美国工程索引,美国剑桥科学文摘,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）,英国英国皇家化学学会文摘,中国北大核心期刊（2000版）
  • 被引量:27713