欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
在掺杂P室采用甚高频等离子体增强化学气相沉积（VHF—PECVD）技术，制备了不同硅烷浓度条件下的本征微晶硅薄膜．对薄膜电学特性和结构特性的测试结果分析表明：随硅烷浓度的增加，材料的光敏性先略微降低后提高，而晶化率的变化趋势与之相反；X射线衍射（xRD）测试表明材料具有（220）择优晶向．在P腔室中用VHF—PECVD方法制备单结微晶硅太阳能电池的i层和p层，其光电转换效率为4．7％，非晶硅／微晶硅叠层电池（底电池的p层和i层在P室沉积）的效率达8．5％．
英文摘要：
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma enhanced chemical vapor deposition （VHF-PECVD） at different silane concentrations in a P chamber. Through analysis of the structural and electrical properties of these materials,we conclude that the photosensitivity slightly decreased then increased as the silane concentration increased,while the crystalline volume fraction indicates the opposite change. Results of XRD indicate that thin films have a （220） preferable orientation under certain conditions. Microcrystalline silicon solar cells with conversion efficiency 4. 7% and micromorph tandem solar cells 8.5% were fabricated by VHF-PECVD （p layer and i layer of microcrystalline silicon solar cells were deposited in P chamber）, respectively.
同期刊论文项目
同项目期刊论文
Influence of front electrode and back reflector electrode on the performances of microcrystalline si
Study of space voltage distribution between large-area parallel-plate electrodes for very high frequ
Study on the optical and electrical properties of plasma for the deposition of microcrystalline sili
Study of one-dimensional spatial distribution of the plasma luminous radicals during depositing sili
Modeling and experiments of high-pressure VHFSiH4/H-2 discharges for higher microcrystalline silicon
Influence of low rate p/i interface layer on the performance of high growth rate microcrystalline si
期刊信息
位置：