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A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with
  • ISSN号：0749-6036
  • 期刊名称：Superlattices and Microstructures
  • 时间：2015.4
  • 页码：111-117
  • 相关项目：富In条件下生长模式对AlInN晶体质量与光电性质的影响
作者： W. Liu|J.J. Zhu|S.M. Zhang|H. Yang|
同期刊论文项目
富In条件下生长模式对AlInN晶体质量与光电性质的影响
期刊论文 38 会议论文 2
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GaN high electron mobility transistors with AlInN back barriers
Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap
The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emit
Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition
Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemi
H_2载气流量对AlN缓冲层生长的影响
Structural modifications of AlInN/GaN thin films by neon ion implantation
AlN隔离层对MOCVD制备的AlGaN/AlN/GaNHEMT材料电学性质的影响
Control of residual carbon concentration in GaN high electron mobility transistor and realization of
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Impact of GaN transition layers in the growth of GaN epitaxial layer on silicon
Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p-i-n avalanche photodiodes