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Temperature and gate bias dependence of carrier transport mechanisms in amorphous indium-gallium-zin
  • ISSN号：0038-1101
  • 期刊名称：Solid-State Electronics
  • 时间：2013
  • 页码：41-44
  • 相关项目：高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
作者： Huang, Xiaoming|Wu, Chenfei|Lu, Hai|Ren, Fangfang|Chen, Dunjun|Jiang, Rong|Zhang, Rong|Zheng, Youdou|Xu, Qingyu|
同期刊论文项目
高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
期刊论文 79
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