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Influence of annealing temperature on the properties of polycrystalline silicon films formed by rapi
  • ISSN号：0957-4522
  • 期刊名称：Journal of Materials Science: Materials in Electro
  • 时间：2013.11
  • 页码：4209-4212
  • 相关项目：Co基Heusler合金半金属磁性隧道结界面特性及电子极化输运性质研究
作者： Jiang, Xuefan|Qian, Bin|Han, Zhida|Hou, Haihong|
同期刊论文项目
Co基Heusler合金半金属磁性隧道结界面特性及电子极化输运性质研究
期刊论文 31
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