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Surface states of InAlN film grown by MOCVD
  • ISSN号：1000-3290
  • 期刊名称：Acta Physica Sinica
  • 时间：2013.9.9
  • 页码：1773021-1773027
  • 相关项目：紫外-红外双色探测材料和器件新原理研究
作者： Yang Yan-Nan|Wang Xin-Qiang|Lu Li-Wu|Huang Cheng-Cheng|Xu Fu-Jun|Shen Bo|
同期刊论文项目
紫外-红外双色探测材料和器件新原理研究
期刊论文 55
同项目期刊论文
Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN
Influence of different annealing temperature and atmosphere on the Ni/Au Ohmic contact to p-GaN
Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor de
The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition
A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe
Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN
Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells
High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy
Temperature-controlled epitaxy of InxGa1-xN alloys and their band gap bowing
Effects of the AlN buffer layer thickness on the properties of ZnO films grown on c-sapphire substra
Ionic liquid gated electric-double-layer transistors based on Mg-doped InN epitaxial films
All-optically controlled one-dimensional photonic crystal of AlGaN film via photorefractive effect
Fabrication of GaN nanodots via GaN thermal decomposition in H2 atmosphere
Effects of Al 0.3 Ga 0.7 As interlayer with pulsed atomic layer epitaxy on heterogeneous integration
ICP刻蚀GaN侧壁倾角以及刻蚀速率的控制
High quality GaN epilayers grown on Si (1 1 1) with thin nonlinearly composition-graded AlxGa1-xN in
Strong enhancement of terahertz response in GaAs/AlGaAs quantum well photodetector by magnetic field
Electrical and Optical Properties of a High-Voltage Large Area Blue Light-Emitting Diode
Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitti
Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifeti
Positive and negative effects of oxygen in thermal annealing of p-type GaN
Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer
The investigation on carrier distribution in InGaN/GaN multiple quantum well layers
Simulation of the light extraction efficiency of nanostructure light-emitting diodes
Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ult
Temperature sensitive photoconductivity observed in InN layers
A study on the spectral response of back-illuminated p-i-n AlGaN heterojunction ultraviolet photodet
Effect of Grain Boundary Scattering on Electron Mobility of N-Polarity InN Films
Terahertz intersubband transition in GaN/AlGaN step quantum well
Effects of Growth Temperature on Properties of Nonpolar a-Plane ZnO Films on GaN Templates by Pulsed
Influence of growth conditions on the lateral grain size of AlN film grown by metal-organic chemical
Vacancy-type defects in InxGa1-xN alloys probed using a monoenergetic positron beam
Effects of the V/III Ratio of a Low-Temperature GaN Buffer Layer on the Structural and Optical Prope
Influence of polarization-induced electric fields on coherent electron tunneling in AlN/GaN coupled
Enhancement-mode InAlN/GaN MISHEMT with low gate leakage current
Effect of light Si-doping on the near-band-edge emissions in high quality GaN
器件参数对GaN基n+-GaN/i-Alx Ga1-xN/n+-GaN结构紫外和红外双色探测器中紫外响应的影响
The effects of InGaN layer thickness on the performance of InGaN/GaN p-i-n solar cells
Distribution of electric field and design of devices in GaN avalanche photodiodes
Properties of Si Doped Al0.4Ga0.6N Epilayers with Different AlGaN Window Layer Grown on High Quality
The Effects of a Low-Temperature GaN Interlayer on the Performance of InGaN/GaN Solar Cells
InAlN材料表面态性质研究
透射式金属光栅耦合SPR传感器
期刊信息
  • 《物理学报》
  • 北大核心期刊（2011版）
  • 主管单位:中国科学院
  • 主办单位:中国物理学会 中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京603信箱(中国科学院物理研究所)
  • 邮编：100190
  • 邮箱：apsoffice@iphy.ac.cn
  • 电话：010-82649026
  • 国际标准刊号：ISSN：1000-3290
  • 国内统一刊号：ISSN：11-1958/O4
  • 邮发代号:2-425
  • 获奖情况:
  • 1999年首届国家期刊奖,2000年中科院优秀期刊特等奖,2001年科技期刊最高方阵队双高期刊居中国期刊第12位
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  • 被引量:49876