欢迎您!
东篱公司
退出
申报数据库
申报指南
立项数据库
成果数据库
期刊论文
会议论文
著 作
专 利
项目获奖数据库
位置:
成果数据库
>
期刊
> 期刊详情页
Performance comparison of front- and back-illuminated modes of the AlGaN-based p-i-n solar-blind ult
ISSN号:1071-1023
期刊名称:Journal of Vacuum Science and Technology B
时间:2014.5
页码:-
相关项目:InGaN量子点的可控生长及其在GaN基激光器有源区中的应用研究
作者:
Wang, Hui|Zhang, Baoshun|Liu, Jianping|Yang, Hui|
同期刊论文项目
InGaN量子点的可控生长及其在GaN基激光器有源区中的应用研究
期刊论文 15
同项目期刊论文
Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diodes structures durin
Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking l
Influences of polarization effect and p-region doping concentration on the photocurrent response of
Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet
Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg d
Remarkably reduced efficiency droop by using staircase thin InGaN quantum barriers in InGaN based bl