中文摘要：

采用双靶共溅法制备了铜掺杂的碲化铋锑热电薄膜，铜与碲化铋锑共溅的方法有利于形成沿c轴方向择优生长的碲化铋锑薄膜。结果表明，铜原子均匀的掺杂在碲化铋锑薄膜材料中。由于铜原子有利于提高载流子迁移率，薄膜材料的电导率随着铜掺杂比例的提高得到了极大的提升。当铜靶的溅射功率为20w时，可以得到最高的电导率，同时功率因子的最佳值可提升到20μW／（cm．K2）。

英文摘要：

： A simple magnetron co-sputtering method was used to fabricate Cu dispersed Bi0.sSbl.sTe3 thin films, and the co-sputtering method was beneficial to the preferential growth of Bi0.5Sbl.5Te3 thin films along c-axis. Cu atoms were well-dispersed in the nano-structured materials. The electrical conductivity sharply increased with the increasing content of Cu due to the effect of Cu on transport property. For Cu target sputtering power of 20 W, a maximum power factor of 20μW/（cm.K2） with an electrical conductivity of 15 × 104 S/m at 355 K were achieved.