中文摘要：

采用脉冲激光沉积（PLD）法在Si（111）衬底上制备稀土Eu^3＋ 掺杂的ZnO薄膜材料, 分别在纯氧和真空气氛中进行退火处理。 XRD图谱中仅观察到尖锐的ZnO（002）衍射峰,表明ZnO：Eu^3＋, Li ＋ 薄膜具有良好的c轴取向。薄膜的结构参数显 示：在纯氧气氛中退火的样品具有较大的晶粒尺寸且应力较小,表明在纯氧中退火的样品具有较好的结晶质量。 通过光致发光谱发现,在纯氧中退火的样品的IUV/IDL比值较大,说明在纯氧中退火的样品缺陷去除更充分, 结晶质量更好。当用395 nm光激发样品时,仅发现Eu^3＋ 位于595 nm附近的5D0 →7F1 磁偶极跃迁峰。 并没有发现Eu^3＋ 在613 nm附 近的特征波长发射,表明掺杂的Eu^3＋ 占据了ZnO基质反演对称中心格位。

英文摘要：

Eu^3＋ doped ZnO thin films fabricated on Si（111） by pulsed laser deposition were annealed in oxygen and vacuum. XRD spectra show that both the films are （002） oriented, which indicates that both the films are highly c-axis oriented. The structure parameters of the thin films show that the film annealed in oxygen ambient has bigger inter-planar space and smaller stress. When excited under the wavelength of 330 nm, the PL spectra exhibit two bands including a UV band and a DL band, and the ratio of IUV/IDL annealed in oxygen is larger. When excited under the wavelength of 395 nm, only obvious emission at the wavelength of about 595 nm was observed. The characteristic emission of 613 nm belonging to Eu^3＋ was not observed, which showed that the doped Eu^3＋ ion occupy inversion center.