中文摘要：

对于GaAs衬底（100）面上用金属有机物气相淀积（MOCVD）技术外延生长的GaInP／GaInAsP单量子阱，在室温下进行0.28MeV的Zn^＋离子注入，选用的注量从1×10^14～5×10^14cm^-2。通过双晶X射线衍射光谱测量，定量地分析了由于离子注入所引起的晶格内应变。实验结果表明在所选用的注量下，由于离子注入引起的应变小于体材料GaAs的最大非弛豫应变值0.038，说明在这样的注入条件下，注入区的结晶态仍然保持地比较好。在较高注量下应变达到饱和，应变的饱和说明缺陷的产生和复合达到了平衡，从而形成了均衡的应变场分布。

英文摘要：

Weak damage by 0.28 MeV Zn^＋ ion implantation in the GaInP/GaInAsP quantum well samples was studied by double-crystal high-resolution X-ray diffraction （HRXRD）. Variation of average strain in implanted layers with different implantation dose was evaluated. It was found that rather low level damage was done by ion implantation in the dose range of （1--5）× 10^14 cm^-2. The lattice strain by ion implantation became saturated in this dose range, indicating that defect production and recombination reached an equilibrium, and a uniform strain field resulted. At a higher dosage of 5 × 10^14 cm^-2 , an abnormal annealing process took place, which partly removed the damage, but not eliminated the strain.