中文摘要：

在考虑沉积原子入射能量影响的基础上，建立了Si（100）-（2×1）表面上Si薄膜生长的动力学蒙特卡罗模型，并对薄膜生长的初期过程进行了研究。结果表明：随着入射率的降低和温度的升高，不同入射能量对扩散距离影响的差异逐渐减小。在一定的入射能量和入射率下存在一最佳成岛温度，该温度随入射能量的增大而降低；随着入射率的降低，不同能量对最佳成岛温度影响的差异越小．

英文摘要：

The kinetic Monte Carlo（KMC） model has been developed to study the Si film growth. The results show that the diffusion distance rises with the increase of incident energy above a certain temperature and under a certain deposition rate, and is hardly affected by the energy size of deposition particles at higher temperature and lower deposition rate. There is an optimum islanding temperature at a given deposition rate, and the optimum islanding temperature will be lower when the atoms deposited with energy and decreases with increasing incident energy. The difference is gradually minish that the incident energy affect film growth with the increase of temperature and the decrease of deposition rate.