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Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs
  • ISSN号：2158-3226
  • 期刊名称：AIP ADVANCES
  • 时间：2013.5.2
  • 页码：052103-1-052103-6
  • 相关项目：高Al组分AlGaN应变量子结构制备与特性研究
作者： H angyang Chen|Dayi Liu|Xu Yang|Junyong Kang|
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高Al组分AlGaN应变量子结构制备与特性研究
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