采用全息光刻和湿法腐蚀光栅技术,成功制备了表面二阶金属光栅宽条型分布反馈(DFB)半导体激光器,无需二次外延生长过程,实现了宽接触室温直流下大范围稳定单纵模工作。腔面未镀膜器件,在脉冲工作条件下,注入电流为2.28A时,单面输出功率大于600mW,斜率效率达0.37mW/mA,功率效率大于11%。在连续电流注入下,当注入电流为1.6A时,单面输出功率大于200mW,光谱线宽小于0.8nm,波长随电流的调谐系数最小为0.43nm/A;注入电流为1.0A时,水平远场发散角为2.1°。
This paper reports a broa&area distributed feedback (DFB) laser with surface second-order metal grating,based on the holographic photolithography and wet etching technology without epitaxial regrowth process after the grating fabrication. At room temperature, for the uncoated device with a cavity length of 1 mm,the stable longitudinal single-mode emission around 927 nm has been achieved in a large current range. In pulsed operation, at a current of 2. 28 A, the front facet output power is above 600 roW,and the slope efficiency is as high as 0. 37 mW/mA with a wallplug efficiency of 11%. In continu- ous-wave (CW) operation,at a current of 1.6 A,the same device delivers front facet output power more than 200 mW with a spectral linewidth less than 0.8 nm and the minimum wavelength shift of 0.43 nm/ A. A small lateral far field angle of 2.1° is obtained at the current of 1 A.