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中文摘要：
采用光刻蚀和Ar离子刻蚀技术成功地在Bi-2212单晶表面制备出台阶型本征Josephson单个结，并在5-65K范围内用四引线法测量了该结零场下的Ⅰ～Ⅴ特征曲线．结果表明，临界电流几乎保持不变，但返回电流随温度增加而增大；与此同时，Mccumber参数βc随着温度增加而减小．临界温度附近，跳跃电压△V明显偏离BCS理论．
英文摘要：
A mesa with intrinsic Josephson single junction has been fabricated successfully on the surface of Bi1.9Pb0.1Sr2CaCu2O8＋x single crystals by photolithgraphy and ion-beam etching technique. The isothermal Ⅰ～Ⅴ curve in 0T was measured by four-probe method from 5 to 65K. The results show that the critical current of junction is independent of temperature, but the return current increases with the increasing temperature. The jumping voltage △V and Mccumber parameter βc decrease with the increasing temperature. The jumping voltage △V deviates the BCS theory near Tc.
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