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中文摘要：
采用金属有机物化学气相沉积（MOCVD）技术生长了具有高In组分InGaN阱层的InGaN/GaN多量子阱（MQW）结构,高分辨X射线衍射（HRXRD）ω-2θ扫描拟合得到阱层In含量28%。比较大的表面粗糙度表明有很大的位错密度。室温下光致荧光（PL）研究发现该量子阱发射可见的红橙光,峰位波长在610 nm附近。变温PL（15～300 K）进一步揭示量子阱在低温下有两个发光机制,对应的发射峰波长分别为538 nm和610 nm。由于In分凝和载流子的局域化导致的载流子动力改变,使得量子阱PL发光峰值随温度增加呈明显的＂S＂变化趋势。
英文摘要：
The InGaN/GaN multi-quantum well（MQW）with high indium content was grown by metal-organic chemical deposition（MOCVD）.The ω-2θ curve of InGaN/GaN MQW was determined by high resolutione X-ray diffraction（HRXRD）and corresponding In composition of 28% in the well was obtained by simulating this curve.At room temperature the red-orange light emitting with the peak value of 610 nm can be obviously observed.Furthermore,temperature-dependent PL spectrum（10-300 K）demonstrates two light-emitting mechanisms at low temperature in the InGaN quantum well.The corresponding peak values are located at 610 nm and 538 nm,respectively.Due to In segregation and carrier localization effects in the InGaN/GaN MQW,the S-shaped PL peaks with increasing temperature are observed.
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