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中文摘要：
利用脉冲激光沉积（PLD）方法在Si（100）衬底上制备了ZnO、Zn0．8Mn0．20、Zn0．8 Co0．20薄膜。薄膜的晶体结构和表面形貌采用X射线衍射仪和原子力显微镜测试。表明薄膜具有明显的c轴择优生长取向，薄膜表面较为平整，颗粒尺寸在纳米量级，薄膜中晶粒的生长模式为“柱状”模式。此外，Mn、Co掺入后，薄膜的X射线衍射峰有小角度偏移，这与Mn^2＋、Co^2＋离子半径有关。PL谱显示Mn、Co掺杂ZnO薄膜的蓝、绿发光峰的位置相对纯的ZnO薄膜没有改变，还出现了紫外发光峰，其中Mn掺杂的蓝、绿光峰的强度减弱，Co掺杂的蓝光峰强度减弱，绿光峰强度增强。这是因为Mn、Co掺入改变了ZnO本征缺陷的浓度，发光峰的强度也随之而改变。
英文摘要：
ZnO and Zn0.8Mn0.2 O and Zn0.8 Co0.2 O thin films were deposited on the Si （100） substrates by the pulsed laser deposition. The structures and the surface morphology of thin films were measured by X-ray diffraction （XRD） and atomic force microscopes （AFM）, This indicated that all thin films were obviously c-axis orientated. Their surface granularities are good, the grain size is in the nanometer magnitude, and the crystal grain growth pattern is ＂columnar＂. When Mn or Co doped ZnO, the diffraction peak position shifted a small angle. This phenomenon correlated with the Mn^2＋ or Co^2＋ ionic radius. The blue and green peaks of Mn or Co doped ZnO thin film did not change comparing with that of pure ZnO thin film. In addition, the ultraviolet peak appeared in the PL spectrum. The intensity of Mn doped ZnO thin film blue and green emission weakened. The intensity of Co doped ZnO thin film blue emission weakened, and that of green emission strengthened, respectively. Therefore, the emission peak intensity is related to intrinsic defect concentration of Mn or Co doped ZnO thin film.
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