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中文摘要：
采用高温熔融法和热处理制备了Cr~（4＋）掺杂β-Zn2SiO4微晶玻璃。通过吸收光谱测试发现,Cr~（4＋）在β-Zn2SiO4微晶玻璃中处于低的晶体场环境中。推导了Cr~（4＋）在β-Zn2SiO4微晶玻璃的Racah参数,得到其能级位于~1E和~3T能级交点附近,在808 nm的二极管激发下,在Cr~（4＋）掺杂β-Zn2SiO4微晶玻璃中可观察到中心波长位于1342nm,半高宽285nm的近红外宽带发射峰,该发射可归于Cr~（4＋）在β-Zn2SiO4微晶低的晶体场格位的发射。
英文摘要：
Cr~（4＋）-doped transparentβ-Zn2SiO4 glass-ceramics were prepared by high-temperature melting and subsequent heat-treatment. The absorption spectra confirmed that Cr~（4＋） in Cr~（4＋）-dopedβ-Zn2SiO4 glass-ceramics is located in a weak crystal field.Racah parameters of Cr~（4＋）-Zn2SiO4 glass-ceramics were estimated,indicating that the energy levels of Cr~（4＋） in glass-ceramics are located near the intersection point of ~1E and ~3T states.The broadband infrared emission centering at 1342 nm with the full width at half maximum of more than 285 nm was observed by exciting the glass-ceramics with an 808 nm laser diode,and which can be attributed to the transition of Cr~（4＋） at low-field sites inβ-Zn2SiO4 glass-ceramics.
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