中文摘要：

三明治风格 memristor 设备被电气化学的免职综合，一部 ZnO 电影用作在做 Al 的 ZnO 之间的活跃的层(偶氮) 并且 Au 电极。ZnO 电影的搬运人集中被在生长过程期间增加 HNO ₃ 控制。到 10 ¹⁹ 厘米 ^-3 的从 10 ¹⁷ 的搬运人集中的产生增加被观察，与在从 6,437% ～ 100% 的开关比率的相应落下一起。当搬运人集中在做它的 10 ¹⁹ 厘米 ^-3, 上面时，抵抗切换特征完全消失了为一台记忆设备不合适。减少交换比率为氧空缺飘移在驱动力被归因于减小。氧空缺的迁居的系统的分析被介绍，包括集中坡度和电的潜在的坡度。如此的氧空缺迁居动力学提供卓见进氧空缺飘移的机制并且为 memristor 设备的工业生产提供珍贵信息。

英文摘要：

Sandwich-style memristor devices were synthesized by electrochemical deposition with a ZnO film serving as the active layer between Al-doped ZnO （AZO） and Au electrodes. The carrier concentration of the ZnO films is controlled by adding HNO3 during the growth process. A resulting increase in carrier concentration from 10^17 to 10^19 cm^-3 was observed, along with a corresponding drop in the on--off ratio from 6,437% to 100%. The resistive switching characteristics completely disappeared when the carrier concentration was above 1029 cm-3, making it unsuitable for a memory device. The decreasing switching ratio is attributed to a reduction in the driving force for oxygen vacancy drift. Systematic analysis of the migration of oxygen vacancies is presented, including the concentration gradient and electrical potential gradient. Such oxygen vacancy migration dynamics provide insight into the mechanisms of the oxygen vacancy drift and provide valuable information for industrial production of memristor devices.