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Effects of an AlN passivation layer on the microstructure and electronic properties of AlGaN/GaN het
  • ISSN号：0947-8396
  • 期刊名称：Applied Physics A-Materials Science & Processing
  • 时间：0
  • 页码：447-449
  • 语言：英文
  • 相关项目：新型低维量子结构与器件
作者： Chen, C|Chen, DJ|Xie, ZL, et al.|
同期刊论文项目
新型低维量子结构与器件
期刊论文 196 会议论文 66 获奖 2 专利 22 著作 2
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