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中文摘要：
研究了用于SiCOH低介电常数薄膜刻蚀的CHF3气体在13.56MHz/2MHz,27.12MHz/2MHz和60MHz/2MHz双频电容耦合放电时的等离子体性质.发现2MHz低频源功率的增大主要导致F基团密度的增大;而高频频率从13.56,27.12增大到60MHz,导致CF2基团的密度增大和电极之间F基团密度的轴向空间不均匀性增加.根据电子温度的分布规律及离子能量随高频源频率的变化关系,提出CF2基团的产生主要通过电子-中性气体碰撞,而F基团的产生是离子-中性气体碰撞的结果.
英文摘要：
This paper investigates the intermediate gas phase in the CHF3 dual-frequency capacitively couple plasma（DF-CCP） driven by the high-frequency（HF） of 13.56 MHz,27.12 MHz or 60 MHz and the low-frequency（LF） of 2 MHz power sources,which was used to etch the SiCOH low dielectric constant（low-k） films.The increasing of 2 MHz LF power led to the increase of F radical concentration,and the increasing of HF frequency from 13.56 MHz and 27.12 MHz to 60 MHz led to the increase of CF2 concentration and a poor spatial uniformity of F radical between the electrodes.According to the electron temperature distribution at different LF power and HF frequency,and the dependence of ion energy on the high frequency,the CF2radicals were found to come from the CHF3 dissociation by the electron-neutrals collisions,and the F radical from the CHF3 dissociation induced by the ions-neutrals thermal collisions.
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