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Characteristics and mechanism of Al1.3Sb3Te etched by Cl2/ BCl3 inductively coupled plasmas
  • ISSN号：0167-9317
  • 期刊名称：Microelectronic Engineering
  • 时间：2014.11.13
  • 页码：51-54
  • 相关项目：纳米复合相变存储材料Si-Sb2Te3的相转变机理研究
作者： Z.T. Song|Y. Cheng|C. Peng|L. Zhang|D.C. Cao|X.H. Guo|W.J. Yin|L.C. Wu|B. Liu|
同期刊论文项目
纳米复合相变存储材料Si-Sb2Te3的相转变机理研究
期刊论文 29
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