位置：成果数据库 > 期刊 > 期刊详情页
Two-dimensional self-limiting wet oxidation of silicon nanowires: Experiments and modeling
  • ISSN号：0018-9383
  • 期刊名称：IEEE Transactions on Electron Devices
  • 时间：2013
  • 页码：2747-2753
  • 相关项目：新型围栅硅纳米线MOS器件的涨落性与可靠性研究
作者： Fan, Jiewen|Huang, Ru|Wang, Runsheng|Xu, Qiumin|Ai, Yujie|Xu, Xiaoyan|Li, Ming|Wang, Yangyuan|
同期刊论文项目
新型围栅硅纳米线MOS器件的涨落性与可靠性研究
期刊论文 8 会议论文 20
同项目期刊论文
Study on the Ge1-xSnx/HfO2 interface and its impacts on Ge1-xSnx tunneling transistor
Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technol
Experimental study on the oxide trap coupling effect in metal oxide semiconductor field effect trans
Characterization of random telegraph noise in scaled high-k/metal-gate MOSFETs with SiO2/HfO2 gate d
Impacts of short-channel effects on the random threshold voltage variation in nanoscale transistors
Design Optimization for Digital Circuits Built With Gate-All-Around Silicon Nanowire Transistors
A Comparative Study on the Impacts of Interface Traps on Tunneling FET and MOSFET