中文摘要：

基于氢离子注入技术和典型电化学阳极浸蚀法制备了多孔硅有图（PS）薄膜。该薄膜的表面形态和特征采用扫描电子显微技术（SEM），X射线衍射（XRD）以及原子力显微技术（AFM）描述。采用大约3．5V／gm的低通场在电流强度为0．1μA／cm^2处获得有效场致发射。在约12．5V／gm的叠加场下，PS薄膜的发射电流密度达到1mA／cm^2。实验结果表明PS薄膜对平板显示仪器具有巨大的应用潜能。

英文摘要：

Patterned porous silicon （PS） films were fabricated based on hydrogen ion implantation technique and typical electrochemical anodic etching method. The surface morphology and charact eristics of the films were characterized by scanning electron microscopy （SEM）, X-ray diffraction （XRD）, and atomic force microscopy （AFM）. The efficient field emission with low turn-on field about 3.5V/μm at current density of 0.1 μA/cm^2 was obtained. The emission current density from the PS films reached 1mA/cm^2 under an applied field about 12.5V/μ m. The experimental results demonstrate that the PS films have great potential applications for flat panel displays.