中文摘要：

利用传输矩阵法设计了空气与基本膜系之间具有3个周期减反膜结构的日盲紫外探测器滤波膜系,并利用半导体器件仿真软件Atlas分析集成了滤波膜系的GaN/AlGaN异质结雪崩光电探测器（APDs）的光电性能。研究结果表明,相对无减反射膜的滤波膜系,本文设计的膜系明显提高了光在日盲区的透过率及截止区的反射率,使GaN/AlGaN APDs有更加平滑的光谱响应曲线、更大的响应度、更陡峭的响应截止边频及更好的滤波性能;同时,GaN/AlGaN APDs比传统AlGaN APDs更有利于光生空穴的注入,使GaN/AlGaN APDs的最大光谱响应度及紫外/可见抑制比较传统的APDs提高超过300%。

英文摘要：

GaN/AlGaN solar-blind avalanche photodiodes （APDs） can enhance the APDs performance by using GaN instead of A1GaN as the multiplication layer due to the higher hole ionization coefficient in the GaN multiplication layer. While this APD can also absorb the radiation with energy larger than bandgap of C-aN （λ〈370 nm） and therefore loses the solid-blind property. In this paper, the solar blind ultraviolet filter film with three periodic anti-reflection coatings between the basic films and air is designed by transfer matrix method, and the optical and electrical characteristics for hereto-structure GaN/A1GaN （AP- Ds） integrated with this filter film on the back of the sapphire substrate are investigated by semiconductor device software Silvaco Atlas. The results show that the proposed filter film can increase pronouncedly the transmittance with λ〈280 nm and reflectivity in photonic bandgap. Therefore, the GaN/A1GaN APDs with designed filter film exhibit the smoother curve of spectral responsivity, the steeper cut-off edge and better filter performance compared with the GaN/A1GaN APDs using the filter film without anti-reflection coatings. Moreover, with respect to conventional A1GaN APDs, the GaN/A1GaN APDs facilitates the photo-generated hole injection from absorption layer into multiplication layer, which enhances the maximum spectral responsivity and ultraviolet/visible rejection ratio of the GaN/A1GaN AP- Ds over 300 %