中文摘要：

以SnO2、Ta2O5和ZnO粉为原料，通过传统陶瓷固相反应烧结法制备了压敏变阻材料，实验中ZnO含量为0～2．00％（摩尔分数），烧结温度控制在1300～1500℃并保温2h。研究了ZnO掺杂量和烧结温度对材料的组成、微观结构和电学性能的影响。结果表明：在温度一定条件下，随着ZnO掺杂量的增加，材料的非线性系数、压敏电压先增大后减小；在ZnO含量一定时，随着烧结温度从1300℃升至1450℃，材料的非线性系数、压敏电压先增大后减小。ZnO掺杂量为0．50％时，在1450℃烧结得到的样品的非线性系数最高（6．2），漏电流最小（262vA／cm^2），压敏电压较高（83V／mm）。

英文摘要：

SnO2-Ta205-ZnO varistors were prepared with SnO2, Ta205, and ZnO powders as raw materials by a conventional ceramic process. In the preparation of the varistors, ZnO content was in the range of 0-2.00% in mole, the sintering temperature was in the range of 1 300-1 500 ℃, and the sintering duration was 2 h. The effect of ZnO content and sintering temperature on the phase component, microstructure and electrical properties of the ceramic varistors were investigated. The results indicated that the nonlinear exponent and varisor voltage of the sample increased with increasing the doping amount of ZnO when the ZnO content was less than 0.50% at the same temperature. However, the nonlinear exponent and varisor voltage of the sample decreased with increasing the doping amount of ZnO when the ZnO content was more than 0.50%. The nonlinear exponent and varistor voltage of the sample firstly increased and then decreased with increasing the sintering temperature from 1 300 ℃ to 1 450 ℃ at the same level of ZnO doped. The ceramic varistor exhibits the optimum nonlinear performance （i.e., nonlinear exponent of 6.2, leakage current of 262μA/cm^2, and varisor voltage of 83 V/mm） when the ceramic varistor with the ZnO content of 0.50% is sintered at 1 450 ℃.