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激光剥离转移衬底的薄膜GaN 基LED 器件特性分析*
  • 期刊名称：半导体技术33,219(2008)
  • 时间：0
  • 相关项目：大注入条件下高发光效率GaN基LED有源区结构研究
同期刊论文项目
大注入条件下高发光效率GaN基LED有源区结构研究
期刊论文 19 会议论文 1
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