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Interface Engineering for High-Performance Top-Gated MoS2 Field-Effect Transistors
  • ISSN号：0935-9648
  • 期刊名称：Advanced Materials
  • 时间：2014.9.24
  • 页码：6255-6261
  • 相关项目：磁回收高效贵金属催化剂的形貌可控制备、离子注入改性研究
作者： Chen, Tangsheng|Li, Jinchai|Ho, Johnny C.|Liao, Lei|
同期刊论文项目
磁回收高效贵金属催化剂的形貌可控制备、离子注入改性研究
期刊论文 90 获奖 4 专利 9
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