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Surface reaction mechanism of Y2O3 atomic layer deposition on the hydroxylated Si(100)-2 x 1: A dens
  • ISSN号：0169-4332
  • 期刊名称：Applied Surface Science
  • 时间：0
  • 页码：7136-7141
  • 语言：英文
  • 相关项目：原子层淀积高介电常数栅介质的界面层抑制和性能调控
作者： Zhou, Guangfen|Hu, Yongqi|Zhang, David Wei|Ren, Jie|
同期刊论文项目
原子层淀积高介电常数栅介质的界面层抑制和性能调控
期刊论文 27
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