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Thermal effect of Ge2Sb2Te5 in phase change memory device
  • ISSN号：1674-1056
  • 期刊名称：《中国物理B：英文版》
  • 时间：0
  • 分类：TP333.4[自动化与计算机技术—计算机系统结构;自动化与计算机技术—计算机科学与技术] TB34[一般工业技术—材料科学与工程]
  • 作者机构：[1]State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China, [2]University of the Chinese Academy of Sciences, Belting 100049, China, [3]Semiconductor Manufacturing International Corporation, Shanghai 201203, China
  • 相关基金：Project supported by the National Basic Research Program of China （Grant Nos. 2010CB934300, 2011CBA00607, and 2011CB9328004）, the National Integrate Circuit Research Program of China （Grant No. 2009ZX02023-003）, the National Natural Science Foundation of China （Grant Nos. 60906004, 60906003, 61006087, 61076121, 61176122, and 61106001）, and the Funds from the Science and Technology Council of Shanghai, China （Grant No. 12nm0503701）.
作者： Li Jun-Tao[1,2], Liu Bo[1], Song Zhi-Tang[1], Ren Kun[1,2], Zhu Min[1,2], Xu Jia[3], Ren Jia-Dong[3], Feng Gao-Ming[3], Ren Wan-Chun[3], Tong Hao[3]
关键词： Ge2Sb2Te5, 相变材料, 存储设备, 热效应, 随机存取存储器, 扫描电子显微镜, PRAM, 高温过程, phase change memory, Ge2Sb2Te5, thermal effect, failure analysis
中文摘要：

Corresponding author. E-mail： liubo@mail.sim.ac.cn

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Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma
An SPICE model for phase-change memory simulations
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基于相变存储器器件单元的电流脉冲测试系统
基于相变存储器的SD卡系统设计
Ge_2Sb_2Te_5的化学机械抛光研究进展
Endurance characteristics of phase change memory cells
DOIND： a technique for leakage reduction in nanoscale domino logic circuits
The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory
Chemical mechanical planarization of amorphous Ge_2Sb_2Te_5 with a soft pad
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Chemical mechanical planarization of Ge2Sb2Te5 using IC1010 and Politex reg pads in acidic slurry
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期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
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  • 国内外数据库收录:
  • 被引量:406