为获得非共轭连接的供体(D)与受体(A)结构对环金属配合物的光电性能影响的关系,设计合成了一类新型的基于咔唑和嗯二唑功能基的D-A型环金属铱配合物,并研究了这类材料的光电性能.研究结果显示:这类磷光材料与母体化合物二[2-(4’,6'-二氟苯基)吡啶-C^2,N’](吡啶-2-甲酸)合铱(Ⅲ)[(dfppy)2Ir(pic)]相比,具有更好的热稳定性、更强的红移紫外吸收峰、更高的荧光量子效率以及改善的电化学和电致发光性能.它们在CH2C12中的最大紫外吸收波长为297nm.最大发光波长为476nm;在固态下的最大发光波长红移至(526±6)nm;其中环金属铱配合物(t-Bu.OXDdfppy)2Ir(pic—Cz)在聚合物发光器件中的发光效率为2.5cd/A,远远高于(dfppy)2Ir(pic)器件的发光效率.
To obtain the rule of influence of donor(D)-acceptor(A) structures attached into iridium complexes by a non-conjugated connection on the optoelectronic properties of their iridium complexes, a series of cyclometalated iridium(Ⅲ) complexes with D-A structures containing carbazole and oxadiazole units were synthesized, and their optoelectronic properties were also investigated. The results show that these D-A based iridium complexes exhibited better thermal stability, more intense red-shifted UV absorption peak, higher emission quantum yield, as well as improved electrochemical and electroluminescence properties, compared with the classical di[2-(4',6'-diflurophenyl) pyridine-C2,N'](piconilic acid) iridium(Ⅲ). Their maximum UV absorption and emission peaks located respectively at around 297 nm and 476 nm in dichloromethane, but the maximum emission peak shifted to (520±6) nm in their neat films. In these iridium complexes, (t-Bu-OXDdfppy)2Ir(pic-Cz) presented a current efficiency of 2.5 cd/A in its doped polymer light-emitting devices, which is higher than that of the (dfppy)2Ir(pic) doped device with the same device configuration.