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中文摘要：
研究了GaN基p-i-n（p-AlGaN/i-GaN/n-GaN）结构紫外探测器的漏电机理.实验发现,在位错密度几乎相同的情况下,基于表面有较高密度的V形坑缺陷材料制备的器件表现出较高的反向漏电.进一步的SEM测试发现,这种V形坑穿透到有源区i-GaN、甚至n-GaN层.在制备p-AlGaN电极时,许多金属会落在V形坑中,从而与i-GaN形成了肖特基接触,有些甚至直接和n-GaN形成欧姆接触.正是由于并联的肖特基接触和欧姆接触的存在导致了漏电的增加.
英文摘要：
The leakage mechanism of GaN-based p-i-n （p-AlGaN/i-GaN/n-GaN） UV detector has been investigated. With the same dislocation density, devices made from material with higher density of V-pits on surface produce larger leakage current. SEM images show that some V-pits penetrate into i-GaN layer, sometimes even the n-GaN layer. If p-ohmic contact metal （Ni/Au） deposits in the V-pits, Schottky contact would be formed at the interface of metal and i-GaN, or form ohmic contact at the interface of metal and n-GaN. The existence of parallel Schottky junction and ohmic contact resistance enhances the leakage current greatly.
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