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Promising defect thermoelectric semiconductor Cu1-xGaSbxTe2(x=0-0.1) with chalcopyrite structure
  • 期刊名称：J. Mater.Chem.A
  • 时间：2013.1.16
  • 页码：677-683
  • 相关项目：若干宽带隙A2IIIB3VI基半导体的能带结构、微结构与热电特性
作者： Yapeng Li|Zhengliang Du|Qingsen Meng|Hong Zhou|
同期刊论文项目
若干宽带隙A2IIIB3VI基半导体的能带结构、微结构与热电特性
期刊论文 29 获奖 2 专利 2
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