中文摘要：

通过向TiO2粉体中加入质量分数为1%-15%的Ga2O3粉末,制备了Ga掺杂的TiO2陶瓷靶,并采用脉冲激光沉积法（PLD）用陶瓷靶制备出TiO2薄膜,将薄膜于800-1000℃下退火。对薄膜结构和光学性质的研究表明1000℃退火条件下浓度为1%Ga2O3掺杂能有效将金红石相TiO2的禁带宽度减小至2.62 eV,使其吸收边红移动至470 nm。

英文摘要：

Ga-doped TiO2 target was synthesized through adding 1 % -15% Ga2O3 into TiO2 powder, and then Ga doped TiO2 thin films were fabricated by pulsed laser deposition technique with the home made Ga-doped TiO2 target and annealed at 800-1000 ℃. The research on the microstructure and optical absorption properties of the thin films suggests that 1 % Ga2O3 doping can effectively narrow the band gap of rutile TiO2 to 2. 62 eV when annealed at 1000℃ , and thereby red-shift the absorption edge to 470nm