中文摘要：

晶片弯曲方法被使用了用 Stoneys 方程在这些电影决定内部压力。在电影免职期间，样品持有者上的晶片固定将限制塑造矩形的晶片的变丑，它可以沿着长度和宽度方向导致压力资料差别。在这份报纸，内部应力由晶片弯曲方法测量了的听电影上的晶片尺寸和晶片固定的效果被讨论。有不同长度 / 宽度比率(L/W=1:1， 2:1， 3:1 和 4:1 ) 的塑造矩形的晶片作为一根伸臂横梁被修理。在听电影免职以后，这电影 / 晶片的侧面用尖笔 profilometer 被测量然后内部压力用在这部电影的 Stoney 方程是计算的。结果证明晶片的固定结束在某种程度上沿着宽度方向限制了晶片的弯曲。为内部应力由晶片弯曲方法测量了的电影，晶片侧面应该沿着长度方向被扫描，扫描距离应该比大或等于晶片长度的一半。当晶片的长度 / 宽度比率到达了 3:1 时，晶片弯曲和计算压力是基本上在沿着长度方向的不同位置的一样。为内部应力由晶片弯曲方法测量了的电影，晶片的长度 / 宽度比率应该被认为比大或等于 3:1，这被推荐，并且使变形的侧面沿着长度方向被扫描。

英文摘要：

Wafer curvature method has been applied to determine the internal stress in the films using Stoney＇s equation.During the film deposition,the wafer fixation on the sample holder will restrict the deformation of the rectangle-shaped wafer,which may result in the stress datum difference along length and width direction.In this paper,the effect of wafer size and the wafer fixation on the TiN film internal stress measured by wafer curvature method was discussed.The rectangle-shaped wafers with different length/width ratios（L/W=1：1,2：1,3：1 and 4：1） were fixed as a cantilever beam.After the TiN films deposition,the profiles of the film/wafer were measured using a stylus profilometer and then the internal stress was calculated using the Stoney equation in the film.The results showed that the fixed end of the wafers limited to some degree the curvature of the wafers along the width direction.For film internal stress measured by wafer curvature method,the wafer profile should be scanned along the length direction and the scan distance should be greater than or equal to half of wafer length.When the length/width ratio of the wafer reached 3：1,the wafer curvature and the calculated stress were basically the same at different positions along the length direction.For film internal stress measured by wafer curvature method,it was recommended that the length/width ratio of wafer should be considered to be greater than or equal to 3：1,and the deformed profile was scanned along the length direction.