接口完成的考虑的一个理论模型被建立预言 Seebeck 系数和电的传导性为一多晶热电(TE ) 变瘦电影。散布机制的接口(包括散布的电影表面和散布的谷物边界) 在这部电影的运输电子,材料被揭示。在 Seebeck 系数,电的传导性和接口参数(电影表面思考系数和谷物边界传播系数) 之间的关系然后关于建议模型被讨论。在在尺寸限制引起的电影和体积材料之间的 TE 性质的差别被调查。结果显示更高的谷物数字导致更强壮的谷物边界散布和 TE 性质的更不同的尺寸效果。与表面效果相对照,谷物边界效果与多晶的结构在 TE 电影的 TE 性质起一个主要作用。
A theoretical model taking into consideration the interface effects is established to predict the Seebeck coefficient and the electrical conductivity for a polycrystalline thermoelectric (TE) thin film. The interface scattering mechanisms (including the film-surface scattering and grain-boundary scattering) of the transport electrons in the film materials are revealed. The relations between the Seebeck coefficient, the electrical conductivity and the interface parameters (the film-surface reflection coefficient and the grain-boundary transmission coefficient) are then discussed with respect to the proposed model. The differences in the TE properties between the films and bulk materials caused by size restriction are investigated. The results indicate that the higher grain number leads to stronger grain-boundary scattering and more distinct size effects of the TE properties. In contrast to the surface effect, the grain-boundary effect plays a main role in the TE properties of TE films with polycrystalline structures.