中文摘要：

测量了大功率InGaAsP／GaAs量子阱半导体激光器在五十分之一阈值电流下的电压低频噪声功率谱密度。实验结果显示，激光器的低频电噪声呈现1／f噪声，在不同的偏置电流范围内，1／f噪声幅度随电流的变化关系不同，整体上随偏置电流的增大而减小，实验中并未发现g-r噪声。结合低偏置电流时激光器动态电阻的大小，给出了1／f噪声的模型，分析了在低偏置电流下的1／f噪声主要来自有源区和漏电电阻，其幅度的大小及其随偏置电流的变化趋势与激光器的可靠性有密切的关系。

英文摘要：

The voltage low-frequency noise power spectral density in high-power InGaAsP/GaAs quanta well semiconductor laser diodes （QW-LDs） was measured below one-fiftieth threshold current. The experimental results show that,the lowfrequency electrical noise in LDs is 1/f noise,whose magnitude decreases with the increasing of bias currents on the whole,and gr noise is not in existence. According to the value of dynamic resistance of LDs at low bias current,the 1/f noise model at low bias current is deduced. Based on the model,it is analyzed that 1/f noise at low bias current mainly arises from the active region and the creepage resistance,and moreover,the magnitude and the variety trend of 1/f noise magnitude with the bias current are nearly correlative with the reliability of LDs.