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On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2010.10.10
  • 页码：153503-153503
  • 相关项目：高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
作者： Yan, Dawei|Lu, Hai|Cao, Dongsheng|Chen, Dunjun|Zhang, Rong|Zheng, Youdou|
同期刊论文项目
高Al组分AlGaN宽禁带半导体量子结构及其光探测器件的基础研究
期刊论文 79
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