欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
提出一种基于反射光谱分析的非在位膜厚控制技术,首先利用椭圆偏振光谱仪确定波长300～1 700 nm范围内的薄膜折射率,由此确定对应于特定波长（如1 550 nm）的最佳抗反射（AR）镀膜沉积条件。然后计算最佳AR镀膜厚度所对应的反射谱,得到相应的CIE标准色谱坐标。通过对比实测镀膜颜色和计算得到的最佳颜色,可以实现小尺寸器件端面上AR镀膜厚度的优化控制。利用这一方法,由等离子体增强化学气相沉积（PECVD）制备的SiNx单层AR镀膜,获得了4.4×10^-4的反射率。
英文摘要：
A novel non-situ film thickness control method based on reflection spectrum analysis is proposed for anti-reflection（AR） coating,which is especially suitable for optoelectronic devices with small facet area.The refractive index of the coating film in 300-1 700 nm wavelength range is evaluated by spectroscopic ellipsometery,and the optimum deposition conditions for AR coating film are determined at a specified wavelength（e.g.1 550 nm）.The reflection spectrum of AR coating with optimum film thickness and its CIE chromatography coordinates can be estimated accordingly.By comparing the measured color of the thin film on coated device against the optimum value,the thickness of AR coating can be controlled to minimize the facet reflection.Based on this method,a single layer AR coating of SiNx with residual reflection as low as 4.4×10-4 is demonstrated by plasma enhanced chemical vapor deposition（PECVD）.
同期刊论文项目
同项目期刊论文
Study on the saturation characteristics of high-speed uni-traveling-carrier photodiodes based on fie
Design and fabrication of multilayer antireflection coating for optoelectronic devices by plasma enh
Y-branch integrated dual wavelength laser diode for microwave generation by sideband injection locki
Novel Back-to-Back Uni-Traveling-Carrier Photodiodes with High Responsivity, High Saturation Current
Influence of Master Laser's Lineshape on the Optically Generated Microwave Carrier by Injection Lock
Fabrication and Packaging of 40-Gb/s AlGaInAs Multiple-Quantum-Well Electroabsorption Modulated Lase
Resonance Suppression of Grounded Coplanar Waveguide in Submount for 40 Gb/s Optoelectronic Modules.
Enhancement of electron- longitudinal optical phonon coupling in highly strained InGaN/GaN quantum w
A Novel Multisection Distributed Feedback Laser with Varied Ridge Width for Self-Pulsation Generatio
Effect of p-n junction location on characteristics of InGaN/GaN multiple-quantum-well light-emitting
40 Gb/s AlGaInAs Electroabsorption Modulated Laser Module Based on Identical Epitaxial Layer Scheme.
40GHz AlGaInAs Multiple-Quantum-Well Integrated Electroabsorption Modulator/Distributed Feedback Las
Optimization of Multiple Quantum Well Electroabsorption Modulators Based on Transmission Performance
Influence of Residual Facet Reflection on the Eye-Diagram Performance of High-Speed Electroabsorptio
A light-trapping structure based on Bi2O3 nano-islands with highly crystallized sputtered silicon fo
Simulation of two-dimensional Mo photonic crystal surface for high-temperature solar-selective absor
位置：